This work presents the results of production and characterization of organic light emitting devices inverted (IOLEDs) and transparent (TOLEDs). As transparent top electrode, a thin film of indium tin oxide (ITO) deposited via rf magnetron sputtering was used. The ITO films were deposited onto organic (CuPC) and metal (Aluminum) protective layers. In order to provent the damage incurred on the organic and metal layers by the sputtering process, the ITO disposition carried out at room temperature and under low rf power. First, the ITO films were characterized by electrical and optical measures. Next, the interaction between the surface of the protective layers (CuPC and Aluminum) and the ITO film was analyzed. Finally, the IOLEDs and TOLEDs devices were characterized by electroluminescence, current density and luminance measures, all as a function of the applied voltage. Form the studies, was possible to produce IOLEDs devicesonto opaque substrates and TOLEDs devices whit average transmittance of 70 per cent in the visible range.