The integration of graphene into nanoelectronic devices is dependent on the availability of direct deposition processes, which can provide uniform, large-area and high-quality graphene on semiconductor substrates such as Ge or Si. In this dissertation, we synthesized graphene directly on ptype Ge(100) substrates by chemical vapor deposition. The influence of the CH4:H2 flow ratio on the graphene growth was investigated. Raman Spectroscopy, Raman mapping, Scanning Electron Microscopy, Atomic Force Microscopy and Scanning Tunnelling Microscopy/Scanning Tunnelling Spectroscopy were the techniques employed to verify the quality of the samples and the type of growth. We determined that for the conditions employed, the growth of graphene is self-limited, with only a single layer deposition, with few defects in its crystalline lattice and with Fermi level characteristic of a material with doping type n.