Infrared sensors have a wide range of civil and military applications.Precisely because of the strong military interest, these devices are considered sensitive technology, and the governments of the producing countries control their commercialization. InGaAs photodiodes built on InP substrates are indicated to cover the spectral range known as short-wave infrared (SWIR),which goes from 0.9 to 1.7 micrometers. This spectral range is useful in fighting forest fires This spectral range is very useful in fighting forest fires, locating clandestine landing and take off runways, and visualization in night missions. In this thesis, two innovations were investigated to improve the performance of diodes of the InGaAs/InP pin diodes in the SWIR range. The first approachproposed was the introduction of the InGaAsP quaternary between the InGaAsactive layer and the InP n+, aiming to reduce trapping at this interface. With the introduction of the quaternary, we obtained an integral increase of 12 percent inthe photocurrent intensity for the wavelength range from 1000 to 1700 nm. The second approach suggested optimization was the deposition of an anti-reflective coating formed by two bilayers of TiO(2) and SiO(2). This optimization aimsto increase the fraction of transmitted photons that can contribute to the generation of the photocurrent. With the anti-reflective coating, we obtained an approximate 25 percent increase in the photocurrent intensity for all devices. Using the device with the two proposed modifications as a reference, the responsivity increase was approximately 6 times higher than that of the device without quaternary, 2.62 mA/W versus 0.45 mA/W, respectively. The normalized detectivity had an increase of roughly 24 times greater than the conventional device, of 1.14 x 10(10) cmHz(1/2)W(-1) against 4.83 x 10(8)cmHz(1/2)W(-1), respectively. The results presented in this thesis indicate that both proposals improved theperformance of conventional devices in the SWIR band.