The objective of the present work is deposition of Cadmiun Telurides films from two sources of materials, Cd and Te, on the basis of the use of diagrams of thermodynamic potentials to evaluate the deposition conditions. In special, the considered method allows to evaluate the influence of gaseous contaminantes, such as, oxygen, on the condensed phases. The method can be applied for the deposition of other compounds that are more stable than the constituent elements. The equipment used in the deposition uses an alternative technique where the temperatures of source and substrate are the same ones.