Amorphous Hydrogenated carbon films (a - C: H) and nitrogenated films ) (a - C: H(N) - deposited by plasma enhanced chemical vapor deposition in 4 CH and CH4-N2 atmospheres were submitted to nitrogen r.f.- plasma treatment. The influence of several parameters was investigated: the chamber pressure, the self-bias voltage and the exposure time. The erosion rate was determined by profilometry. It increases as the self-bias increases and tends to saturate for higher pressures. The nitrogen incorporated in the films was measured by nuclear reation analysis. The results indicate a decrease in the N content a the self-bias increase that can be atributted toen increase of the sputtering yield. The chemical bonds were probed by XPS and two chemical environments can be identified, one with N atoms surrounded by C atoms and the other one with N atoms binding to H. Surface roughness and friction coefficient modifications were followed by atomic force and lateral force microscopies. The surface roughness is independent on the value of the self-bias voltage, while the friction coefficient slightly decreases.