In this work graphene films were obtained using a solid precursor, Triphenylphosphine, by chemical vapor deposition in high vacuum (HVCVD). Scanning electron microscopy allowed to observe the presence of small inhomogeneus regions on the surface of the grown samples. These regions were observed in the microscopy before and after the transfer process from the copper foil to silicon oxidized wafer. XPS measurements checked the incorporation of phosphorus in the film grown. Raman spectroscopy was used to determine the suitable working temperature in the growth system. The presence of graphene was confirmed in all samples, but it was observed that in general, the amount of defects in the samples increased with increasing the mass of the precursor used in growth. The results are discussed in light of recent theoretical works that address the use of Raman technique in the study of defects in graphene.