The objective of this dissertation has been to study the structural and mechanical properties of amorphous SiC:N thin films and the viability of their use as adhesive layer between amorphous C:N thin films and 316L stainless steel. The a-SiC:N films were grown via Plasma-Enhanced Chemical Vapor Deposition (PECVD), using Hexamethyldisilazane (HMDSN) as precursor on 316L stainless steel and crystalline silicon substrates 100. For the deposition, the parameters changed were the self-bias (from -150V to -450V) and the deposition temperature (25 Degree Celsius, 200 Degree Celsius and 300 Degree Celius). The characterization of the films was accomplished by using profilometry techniques, used to obtain the deposition rate and the internal stress of the films, x-ray photoelectron spectroscopy (XPS) and infrared spectroscopy used to identify the presence of bonding between the Silicon, Carbon and Nitrogen atoms. The Raman spectroscopy was employed to observe the presence of the D and G bands with characteristics of amorphous carbon films. The nanoindentation analysis determined that the hardness varied between 8 and 12GPa. Atomic force microscopy (AFM) evidenced the presence of nanostructures on the surface of the films. Finally, we were able to perform deposition of hydrogenated amorphous carbon and of fluorinated amorphous carbon thin films on stainless steel substrates using a-SiC:N thin films as adhesive layer.