The intermediate band solar cell (IBSC), an alternative to the single junction solar cell, is a third generation device that achieves greater efficiency while maintaining the simplicity of having only one pn junction, guaranteeing low cost and low complexity to manufacture. In this thesis, an extensive experimental work is presented, using atomic force microscopy, transmission electron microscopy, cathodoluminescence and photoluminescence techniques, in addition to an extensive theoretical work based in simulations performed with nextnano and SCAPS softwares. Through the obtained data, the choice of InGaP for the solar cell matrix and InAs for the quantum dots; the inclusion of field damping layers to minimize the negative effect of the electric field on the quantum dots; the disordering of bulk InGaP; the way small quantum dots with thinner cap layers alter the ordering tendency of subsequent layers of InGaP; the inclusion of a GaP layer to ensure the interfaces’ quality during the structure s growth; and the quantum dots optimization to reach the intermediate band ideal theoretical energy are discussed. Five complete structures for reference and intermediate band solar cells based in the presented discussions are then proposed for future growth. These IBSC structures should present interesting figures of merit, such as a VOC ranging between 1,32 eV and 1,44 eV (1; 2), an increase between 5 per cent and 50 per cent in ISC (3) and low resistance effects, ensuring a high FF and efficiencies superior to the reference solar cells.