A single-junction solar cell is formed by two semiconductor materials, one p-type, and another one n-type. Only photons with energy higher than or equal to the solar cell s energy gap are absorbed and able to promote electrons from the valence band to the conduction band harvesting only a small part of the solar spectrum. IBSC are an alternative way to harvest photons with other energies. New energy transitions are available to the electron, allowing photons with lower energies to be absorbed by the material. To form the intermediate band, InAs/InGaP quantum dots are often used due to their large conduction band offset. However, the ideal transition energies for the IBSC are not achieved with that heterostructure. One possible candidate to reach the ideal transition energies for the ISBC is the InP/InGaP quantum dots, which can achieve type II confinement, where the electron is confined inside the quantum dot while the hole is confined outside it, resulting in spatial separation. In this case, the recombination of the electron-hole pair is indirect, decreasing the probability of recombination and increasing the carrier lifetime, consequently increasing the efficiency of the solar cell. In this work, we propose the use of InAsP/InGaP quantum dots to engineer the intermediate band of the solar cell. The goal is to create an intermediate band with type II quantum dots while also achieving a large conduction band offset. We perform computational simulations for InP and InAsP quan- tum dots with InGaP as barrier to study the influence that parameters such as height, width and alloy composition (for InAsP quantum dots) have on the electron and hole location probability density, the transitions energy and the energy bands profiles. We grew samples with InP and InAsP quantum dots under different growth conditions. The samples were evaluated by x- ray diffraction, atomic force microscopy, transmission electron microscopy, photoluminescence and time-resolved photoluminescence measurements.