Transition metal dichalcogenides, such as molybdenum disulfide, tungsten disulfide, and others exhibit many interesting properties. Such properties make them good prospects for future applications, especially in optoelectronics. From telecommunication to medicine, due to the interesting indirect-to-direct band-gap transition, one isolates a single layer of the material. One of the goals of this thesis is to modify the structure of tungsten disulfide using a simple, reliable, structural modification approach, i.e., plasma treatment. In this way, we were able to enhance the materials luminescence emission intensity up to 34 percent. Also, this treatment pdoped the monolayer structures, opening doors for the realization of devices. Another objective of this work is to develop new ways to characterize this material, particularly the determination of a critical parameter for WS2 applications, the number of layers, using Raman spectroscopy, where we developed a efficient method to discriminate monolayers independently of induced strain, structure modification and doping.