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The aim of this work was to study the Al2-xGaxW3O12 system (x = 0.2, 0.4, 0.5, 0.6, 0.7, 0.8, 2) in order to investigate the relationship between the partial replacement of Al3+ (r = 67 Angstrom) by Ga3+ (r = 0.76 Angstrom) and the coefficient of thermal expansion on the Al2W3O12 phase. It was determined as limit of solubility of Ga3+ in Al2-xGaxW3O12 the sample 𝑥 = 0.5, once it was identified in the diffraction patter WO3 as a secondary phase in 𝑥 bigger or equal 0.6. Unlike Al2W3O12 which is
orthorhombic (Pbcn) at room temperature, the phases 0.2 less or equal 𝑥 less or equal 0.5 in the Al2-
xGaxW3O12 appeared, at room temperature, in the monoclinic system (P21/a). The transition to orthorhombic phase (Pbcn), determined by XRPD in situ and dilatometry, was observed below 100 C for all compositions. The phase transition temperature increases as the Ga3+ content was increased in the
crystalline structure. The thermogravimetric analysis of the monophasic samples showed that they were not hygroscopic. Although the monophasic composition with the highest Ga3+ content was Al1.5Ga0.5W3O12, the phase Al1.6Ga0.4W3O12 presented the lowest linear coefficient of thermal expansion, alpha l = 1.14 K -1, a reduction of 25 percent comparing with the linear coefficient of thermal expansion of the phase Al2W3O12. The Rietveld fit to the orthorhombic Pbcn space group, of
the Al1.6Ga0.4W3O12 diffraction pattern taken at 100 C, confirms that Ga3+ was replaced by Al3+ in the same proportion described in the nominal chemical formula, and showed that its polyhedral distortion , Al(Ga)O6 and WO4, is in a higher amount than generally noticed for other phases in this crystal family. The Raman spectroscopy corroborated the analyzes regarding the solubility limit,
although it showed that the compositions 𝑥 less or equal 0,5 could have a minimum quantities, undetectable by XRPD, of Al2O3 and WO3, when synthesized by the solid state reaction method. Kubelka-Munk graphics of Al2-xGaxW3O12 suggest that the partial replacement of Al3+ by Ga3+ increases the band gap in x less or equal 0,4, however, the absorption of Al2-xGaxW3O12 in the visible region increase, this behavior is apparently caused by the presence of WO3, as deduced by Raman
spectroscopy. Attempts to synthesize Ga2W3O12 was not successful, although the enthalpy of formation of this compound, calculated by Generalized Kapustinskii equation and the Born-Haber cycle, presented a high exothermic value, ΔHF = −10149,15 Kj. mol -1.