Multi-junction solar cells hold the current world records of photovoltaic conversion efficiency. A technical difficulty that exists in these devices is that the current of these devices is limited by the smaller of those generated by each of the joints. In the case of the triple junction solar cell of InGaP / InGaAs / Ge, the standard cell for spatial applications, the limitation is on the intermediate cell. There is a proposal to use quantum wells at the junction to increase the current produced by the intermediate cell, so the other pn junctions that make up the triple cell need to be redesigned to have a current match. The present work aims to present an optimized design for the InGaP solar cell which is the top pn junction. The intention is to find an optimized structure for the current matching through simulations and fabricate the solar cell. The samples were grown in a vapor phase epitaxial deposition reactor and the data used in the growth of the layers, namely thickness and doping, were obtained from the simulations. To verify the optical, structural and electrical quality of the grown layers, photoluminescence, x-ray diffraction and Hall effect experiments were performed. Resistivity curves obtained by the transmission line method, current-voltage curve and electroluminescence are presented, which give a diagnosis of the quality of the device produced.