This work describes the full development of a RF Power Amplifier for Multiband Transceivers. In its initial stage shows an overview of the theory of all relevant parameters to measure the performance of these devices, like power, gain and nonlinearity parameters. Then it exposes the basic theories for the understanding of the mechanisms for extracting the maximum power of a transistor, focusing on field effect transistors FET, including characterization for regimes of high power. It presents the modes of operation of a power amplifier, focusing on so-called classical modes, since these modes are suitable for broadband operation. For proper operation of any device that presents gain, the stability analysis is presented with the stabilization procedure of transistors. From all theoretical basis, is developed a design methodology of power amplifiers using the computational simulation tool Advanced Design System. So after all the amp modeling, construction and measurements are performed and good agreement was obtained with the simulation.