Infrared detectors are considered of dual employment technologies, ie they can be employed both in the civilian and military environment. With respect to the civilian environment, such detectors can be used, among other applications, as an auxiliary device in the formulation of medical diagnoses, on the routine inspection in industries, in pests control in agriculture and so on. Military applications involving infrared detectors (night vision) are commonly tactical situations, when they are employed in order to get an advantage over the enemy. The main motivation of the present work is the systematical evaluation of the performance of infrared detectors based on the multiple quantum wells heterostructure of InGaAs /InAlAs, varying the density of the doping element (silicon) into the well. The epitaxial growth of the heterostructures was performed in a MOVPE reactor. Afterwards, they were characterized in accordance with X-ray diffraction, Hall effect, photoluminescence and absorption techniques. Finally, they were processed, achieving a devices form. Based on the characterization of the final device, that took into consideration the key figures of merit of a photodetector (dark current, photocurrent, responsivity and detectivity), it was possible to obtain important conclusions about the quantum well doping effects on the QWIPs (Quantum Well Infrared Photodetectors) performance.