Infrared photodetectors have a wide range of direct applications in various sectors, from military (e.g. night vision, missile guidance) to leisure (electronic devices). Specifically, III-V semiconductor-based photodetectors are devices that can be built to select and measure specific ranges of the electromagnetic spectrum. Among the photodetector figures of merit, one of the great challenges is reducing the dark current. In this work we aim to produce an InGaAs device with planar geometry, which according to the literature has the characteristic of presenting a low dark current. This geometry requires a dopant diffusion. This work reports all the steps, from sample growth to final device characterization. With the aid of an MOVPE reactor, the calibrations of the layers that are part of the final device were made, as well as the calibrations of the dopant diffusion process (Zn). All sample layers were individually optimized, as well as, the desired diffusion depth (1 µm and doping level of 2x1018 cm−3). Several processing and characterization techniques were used throughout the work to obtain the best possible device. We can highlight the photocurrent and dark current results, in which the measurements were performed with a temperature variation from 77 up to 300 K. It was possible to observe from the photocurrent spectrum result a peak at 0,75 eV relative to the InGaAs at 300 K. This result is in agreement with those of InGaAs diodes made using the conventional Zn doping method.