It is well known that gallium nitride (GaN) is one of the most interesting and promising materials for optoelectronic devices. GaN can be used for manufacturing blue light- emitting diodes and lasers. Development of this material is concerned with three main areas 1) deposition of GaN crystalline layers onto different substrates; 2) manufacturing of GaN nanorods from chemical reactions in the confined spaces provided by carbon nanotubes; 3) synthesis of GaN powders by different chemical methods. Recently, new deposition techniques have adopted sublimation of GaN powders as gallium source to produce GaN nanorods, thin films or bulk crystals. These sublimation methods rely on the supply of GaN powders. This thesis presents a new route to produce GaN powder from gas-solid chemical reaction between Ga2O3 and NH3 using carbon as reducing agent in a new reactor design. The GaN powder obtained from this route possesses a hexagonal crystal structure and was found to correspond to almost 100% conversion of Ga2O3. The amount of GaN present in the powders varied with experimental parameters. A statistical analysis showed the influence of temperature, carbon/Ga2O3 ratio and experimental time on the production of GaN powder.