Infrared detectors have a wide range of applications in various industries, from military (night vision, missile) to civil (electronics). In this dissertation we were interested in the intraband absorption of multiepitaxial heterostructures with aim at absorption of 4.1 microns infrared where there s located the first atmospheric transmission window. We based our quantum well heterostructures in semiconductor from the III-V family. We discourse about the production of the device in detail, along with all the calibration procedures for each step. The growth is done by MOVPE technique that has high accuracy in terms of thickness and composition of the deposited layer. We then discuss about the processing of the grown sample to expose the electrical contacts. And finally we describe the process of integration of the device over a base for reading the signal. Completed the production stage, we studied the characteristics of the sample both qualitatively and quantitatively. This study aimed to obtain two pieces of information: a direct comparison between the methods for light coupling, and measuring the efficiency of the detectors produced. At the end of the work we obtained a photodetector produced from its growth till its final assembly. Also we obtained the results of the efficiency of the sample that already indicated possible improvements for future works. If the aim is at the formation of a large-scale production of photodetectors, this study identified areas with a shortage of available techniques and in need of investment.