In contemporary society the dependence on optoelectronic devices for countless daily applications has increased gradually. Particularly in the last decade fields such as energy generation through inorganic solar cells or quantum computation based in exchange of single photons has been heavily funded for their development. The aim of this thesis is defining the production parameters needed to fabricate quantum dots (QD) based on III-V semiconductors with planar geometry for intermediate band solar cell (IBSC) and with nanowire geometry (quantum dot in nanowire, QD-in-NW) for single photon emitter applications. For IBSC, the QDs are generated via self-assembly by Stranski-Krastanow mode. The IBSC s band structure requires a potential well deep enough to have 3 parallel photon absorption in different energy ranges (one is the barrier s energy gap, another is from the valence band to the intermediate band and the third one is from the intermediate band to the top of the barrier). The selected materials were AlxGa1-xAs as barriers, InAs as well, all grown on GaAs(100) substrate. The growth results were analysed by atomic force microscopy (AFM), scanning eléctron microscopy (SEM), transmission eléctron microscopy (TEM) and photoluminescence (PL). For the single photon emitters, the QDs (InxGa1-xAs) are grown axially over GaAs nanowires on a GaAs(111)B substrate. The chosen growth technique was the selective area growth (SAG) that brings many advantages in crystal quality and device lithography. This technique consists of applying a mask over the substrate with nanometric holes inside which the epitaxy occurs. The results were analysed by SEM, TEM, PL and energy dispersive X-ray spectroscopy (EDX). In both cases, the growth of the structures were optimized for better quality. The growth parameters could be correlated with the structure’s morfology, cristalinity and composition. For the IBSC, a capping method named In-flush was used to increase the crystal quality from the layers and the homogeneity from the QD s heights. For the QD-in-NW, firstly the nanowire s growth was optimized for higher aspect ratio and only then the growth of the InAs QD was optimized for axial growth over the nanowire. In both cases the optical measurements show that the proposed structures were grown successfully.